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STB120NH03L - STI120NH03L STP120NH03L
N-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAK STripFETTM Power MOSFET for DC-DC conversion
General features
Type STB120NH03L STP120NH03L STI120NH03L VDSS 30V 30V 30V RDS(on) <0.0055 <0.0055 <0.0055 ID 60(1) 60(1) 60(1) TO-220
3 1 2
3 1
D2PAK
1. Value limited by wire bonding
RDS(on) *Qg industry's benchmark Low Conduction losses reduced Switching losses reduced Low Threshold device
I2PAK
3 12
Description
These devices utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STB120NH03L STI120NH03L STP120NH03L Marking B120NH03L 120NH03L P120NH03L Package D
2PAK
Packaging Tape & reel Tube Tube
IPAK TO-220
February 2007
Rev 7
1/17
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Contents
STB120NH03L - STI120NH03L - STP120NH03L
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6 7
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STB120NH03L - STI120NH03L - STP120NH03L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0V) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 20 60 60 240 110 0.73 700 -55 to 175 Unit V V A A A W W/C mJ C
ID (1) IDM
(2)
PTOT EAS (3) TJ Tstg
Single pulse avalanche energy Operating junction temperature Storage temperature
1. Value limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting TJ = 25C, ID = 30A, VDD < 30V
Table 2.
RthJC RthJA Tl
Thermal data
Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose 1.30 62.5 300 C/W C/W C
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Electrical characteristics
STB120NH03L - STI120NH03L - STP120NH03L
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating, TC=125C Min. 30 1 10 Typ. Max. Unit V A A
IDSS
IGSS VGS(th) RDS(on)
Gate body leakage current VGS = 20V (VDS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 250A VGS = 10V, ID = 30A VGS = 5V, ID = 30A 1 1.8 0.005 0.006
100
A V
3 0.0055 0.0105
Table 4.
Symbol Ciss Coss Crss td(on) tr td(off) tf Rg Qg Qgs Qgd Qoss (1) Qgls (2)
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Off voltage rise time Fall time Gate input resistance Test conditions VDS = 25V, f = 1MHz, VGS = 0 Min. Typ. 4100 680 70 16 95 48 23 1.3 Max. Unit pF pF pF ns ns ns ns
VDD = 15V, ID = 30A, RG = 4.7, VGS = 10V (see Figure 12) f = 1MHz gate DC bias=0 test signal level=20mV open drain VDD=15V, ID = 60A VGS =10V (see Figure 13) VDS = 24V, VGS = 0 VDS < 0, VGS= 0V
Total gate charge Gate-source charge Gate-drain charge Output charge Third-quadrant gate charge
57 12 7 27 55
77
nC nC nC ns ns
1. Qoss = Coss* VIN, Coss = Cgd + Cds. See power losses calculation 2. Gate charge for synchronous operation.
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STB120NH03L - STI120NH03L - STP120NH03L
Electrical characteristics
Table 5.
Symbol ISD ISDM VSD (1) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 30A, VGS = 0 ISD = 60A, di/dt = 100A/s, VDD = 30V, TJ =150C 46 64 2.8 Test conditions Min. Typ. Max. 60 240 1.4 Unit A A V ns nC A
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STB120NH03L - STI120NH03L - STP120NH03L
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
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STB120NH03L - STI120NH03L - STP120NH03L Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STB120NH03L - STI120NH03L - STP120NH03L
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STB120NH03L - STI120NH03L - STP120NH03L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STB120NH03L - STI120NH03L - STP120NH03L
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STB120NH03L - STI120NH03L - STP120NH03L
Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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Package mechanical data
STB120NH03L - STI120NH03L - STP120NH03L
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STB120NH03L - STI120NH03L - STP120NH03L
Packing mechanical data
5
Packing mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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Appendix A
STB120NH03L - STI120NH03L - STP120NH03L
6
Appendix A
Figure 18. Buck converter: power losses estimation
The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature.
The low side (SW2) device requires: - - - - - - Very low RDS(on) to reduce conduction losses Small Qgls to reduce the gate charge losses Small Coss to reduce losses due to output capacitance Small Qrr to reduce losses on SW1 during its turn-on The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source voltage to avoid the cross conduction phenomenon; Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate Small Qg to have a faster commutation and to reduce gate charge losses Low RDS(on) to reduce the conduction losses.
The high side (SW1) device requires: - - -
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STB120NH03L - STI120NH03L - STP120NH03L
Appendix A
Table 6.
Power losses calculation
High side switching (SW1) Low side switch (SW2)
Pconduction
R DS(on)SW1 * I 2 * L
R DS(on)SW2 * I 2 * (1 - ) L
IL Ig
Pswitching
Vin * (Q gsth(SW1) + Q gd(SW1) ) * f *
Zero Voltage Switching
Recovery(1) Pdiode Conduction
Not applicable
Vin * Q rr(SW2) * f
Not applicable
Vf(SW2) * I L * t deadtime * f Q gls(SW2) * Vgg * f
Vin * Q oss(SW2) * f 2
Pgate(QG)
Q g(SW1) * Vgg * f
PQoss
Vin * Q oss(SW1) * f 2
1. Dissipated by SW1 during turn-on
Table 7.
Parameters meaning
Meaning Duty-cycle Post threshold gate charge Third quadrant gate charge On state losses On-off transition losses Conduction and reverse recovery diode losses Gate drive losses Output capacitance losses
Parameter d Qgsth Qgls Pconduction Pswitching Pdiode Pgate PQoss
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Revision history
STB120NH03L - STI120NH03L - STP120NH03L
7
Revision history
Table 8.
Date 20-Dec-2004 20-Dec-2005 19-Jun-2006 16-Feb-2007
Revision history
Revision 4 5 6 7 First release New device inserted The document has been reformatted Added IPAK package Changes
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STB120NH03L - STI120NH03L - STP120NH03L
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